Panjit 最新の個別半導体
個別半導体のタイプ
適用されたフィルタ:
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
PANJIT 60V Automotive P-Channel MOSFETs
04/21/2025
04/21/2025
Advanced trench process technology minimizes RDS(ON) while maximizing avalanche ruggedness.
PANJIT SBA Automotive Super Schottky Rectifiers
04/09/2025
04/09/2025
Offer 0.45V to 0.53V surface mount extreme low forward voltage drop with a 1A to 2A current rating.
PANJIT MBR10H TO-277C Schottky Barrier Rectifiers
11/28/2024
11/28/2024
Surface mount (SMD) H-type Schottky devices with ultra-low insulation resistance (IR).
PANJIT PE47xxL1Q High Surge ESD Protection
11/28/2024
11/28/2024
Enhances component capability and resists EOS events in a DFN1610-2L package.
PANJIT Gen.2 ESD Protection Diodes
09/13/2024
09/13/2024
Smart ESD protection diodes for high-speed data lines.
PANJIT PSMB033N10NS2 100V N-Channel MOSFET
09/04/2024
09/04/2024
Features a high switching speed and low reverse transfer capacitance.
PANJIT 60/100/150V Automotive-Grade MOSFETs
09/03/2024
09/03/2024
Family of 60V, 100V, and 150V AEC-Q101 qualified MOSFETs.
PANJIT KBJB Low Profile Bridge Rectifiers
08/29/2024
08/29/2024
Devices feature a maximum junction temperature (Tj) of 150℃ with a current rating of 10A or 15A.
PANJIT 150V N-Channel Enhancement-Mode MOSFETs
08/29/2024
08/29/2024
Features a high switching speed and operates from 4A to 125A continuous drain current.
PANJIT 150V N-Channel Automotive MOSFETs
08/29/2024
08/29/2024
Optimized to have excellent FOM and AEC-Q101 qualified with standard-level gate drive.
PANJIT PJQx 30V N-Channel Enhancement Mode MOSFETs
06/20/2024
06/20/2024
Designed with logic level gate drive and are ideal for automotive applications.
PANJIT PJQx43 30V P-Channel Enhancement Mode MOSFETs
06/20/2024
06/20/2024
Reliable and rugged MOSFETs with ±25V gate-source voltage and -55°C to 150°C operating temperature.
PANJIT MBRxH60AFC-AU Schottky Barrier Rectifiers
06/18/2024
06/18/2024
Offer high efficiency and feature high surge current capability.
PANJIT PGRx16PT General-Purpose Rectifiers
06/17/2024
06/17/2024
Designed with inrush current and high voltage capability in the TO-247AD-2LM package.
PANJIT MSR2DAFC Hyper-Fast Recovery Rectifier
06/17/2024
06/17/2024
Designed with Trr under 20ns for efficient rectification in electronic applications.
PANJIT MSRxDAL Hyper Fast Recovery Rectifiers
05/23/2024
05/23/2024
Feature fast recovery time (Trr) for efficient rectification in electronic applications.
PANJIT PE1403M1Q ESD Protection Diode
05/23/2024
05/23/2024
Features low leakage current, ultra-low capacitance, and low clamping voltage.
PANJIT PTGH High-Speed 650V Field Stop Trench IGBTs
04/12/2024
04/12/2024
Offer superior high-speed switching capabilities with a low saturation voltage of 1.65V at TVJ 25°C.
PANJIT PZS52CxM1Q Silicon Zener Diodes
04/11/2024
04/11/2024
Features a planar die construction and are ideal for automated assembly processes.
PANJIT MMDT2222ATB6-AU Dual Surface Mount NPN Transistor
04/11/2024
04/11/2024
AEC-Q101-qualified electrically isolated dual NPN switching transistor.
PANJIT PJMBZ ESD Protection Diodes
02/19/2024
02/19/2024
Designed to protect sensitive equipment against ESD and prevent latch-up events.
PANJIT S5xB Surface Mount General-Purpose Rectifiers
01/19/2024
01/19/2024
Converts an alternating current (AC) voltage into a direct current (DC) voltage.
PANJIT Ultra-Low Forward Voltage Bridge Rectifiers
11/13/2023
11/13/2023
Engineered with oxide planar chip junction technology and features PI protection layers.
PANJIT S10KC & S10MC Surface-Mount Rectifiers
11/10/2023
11/10/2023
Designed for modern electronics and comes in 94V-0 flammable plastic packages for safety.
表示: 1~25/50
Nexperia GANB1R2-040QBA ・ GANB012-040CBA GaN HEMT
07/03/2025
07/03/2025
40V、1.2mΩ または12mΩ 、双方向窒化ガリウム(GaN)高電子移動度トランジスタ(HEMT)です。
Semtech RClamp03301H-RClamp0801H ESD & EOS保護
07/03/2025
07/03/2025
このESDおよびEOS保護は高速イーサネットラインを保護するために特別に開発されています。
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FET
07/01/2025
07/01/2025
パッケージはTOLT、TO247、TOLLが選択でき、Gen IV Plus SuperGaN®プラットフォームを使用しています。
ROHM Semiconductor 高効率ショットキーバリアダイオード
07/01/2025
07/01/2025
低い順方向電圧(VF)と低い逆方向電流(IR)のバランスを最適化するよう設計されており、フリーホイールダイオードとしてよく使用されます。
Micro Commercial Components (MCC) Instrument Cluster Solutions
06/30/2025
06/30/2025
Provides support for real-time vehicle data in today’s digitally enhanced dashboards.
Semtech RClamp03348P RailClamp®ESD保護ダイオード
06/27/2025
06/27/2025
ESDピーククランピングおよび TLPクランピング電圧の両方を最小限に抑えるように設計されています。
onsemi NVMFS4C03NWFET1GシングルNチャネルパワーMOSFET
06/23/2025
06/23/2025
優れた熱性能と低RDS(on)を発揮し、コンパクトな5mm x 6mm PowerFLATパッケージに収められています。
PANJIT 50V Enhancement Mode MOSFETs
06/09/2025
06/09/2025
These MOSFETs have advanced Trench process technology and offer a low RDS(ON).
onsemi NVMFDx 100VデュアルNチャンネルパワーMOSFET
06/09/2025
06/09/2025
低RDS (on) 値と高速スイッチング特性が特徴で、省スペースDFN-8パッケージに収められています。
Infineon Technologies CoolMOS™ CM8 650VパワーMOSFET
06/03/2025
06/03/2025
スーパージャンクション(SJ)原理に従って設計されており、スイッチング損失と導通損失が低く抑えられています。
表示: 1~25/985
