|
|
ESD保護ダイオード/TVSダイオード 600 W 4kW Transil 6V to 70V Uni
- SM6T12AY
- STMicroelectronics
-
1:
¥177
-
4,830在庫
|
Mouser 部品番号
511-SM6T12AY
|
STMicroelectronics
|
ESD保護ダイオード/TVSダイオード 600 W 4kW Transil 6V to 70V Uni
|
|
4,830在庫
|
|
|
¥177
|
|
|
¥110.6
|
|
|
¥72.5
|
|
|
¥56.1
|
|
|
¥40.3
|
|
|
表示
|
|
|
¥50.7
|
|
|
¥34.8
|
|
最低: 1
複数: 1
:
2,500
|
|
|
|
|
SMB (DO-214AA)
|
|
|
|
IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
- STGF5H60DF
- STMicroelectronics
-
1:
¥256
-
2,258在庫
|
Mouser 部品番号
511-STGF5H60DF
|
STMicroelectronics
|
IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
|
|
2,258在庫
|
|
|
¥256
|
|
|
¥122.5
|
|
|
¥108.4
|
|
|
¥86
|
|
|
表示
|
|
|
¥69.7
|
|
|
¥67.9
|
|
|
¥64.5
|
|
|
¥61.6
|
|
最低: 1
複数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220FP-3
|
|
|
|
SCR 1.25A SENSITIVE GATE SCR
- X0203MA 1BA2
- STMicroelectronics
-
1:
¥96.4
-
6,469在庫
|
Mouser 部品番号
511-X0203MA-1BA2
|
STMicroelectronics
|
SCR 1.25A SENSITIVE GATE SCR
|
|
6,469在庫
|
|
|
¥96.4
|
|
|
¥59.3
|
|
|
¥37.9
|
|
|
¥28.6
|
|
|
表示
|
|
|
¥25.6
|
|
|
¥17.9
|
|
|
¥16.9
|
|
|
¥15.6
|
|
最低: 1
複数: 1
|
|
SCRs
|
|
Through Hole
|
TO-92-3 (TO-226-3)
|
|
|
|
ESD保護ダイオード/TVSダイオード 1500 W 10kW Transil 5.8V to 70V Uni
- SM15T47AY
- STMicroelectronics
-
1:
¥158
-
2,191在庫
|
Mouser 部品番号
511-SM15T47AY
|
STMicroelectronics
|
ESD保護ダイオード/TVSダイオード 1500 W 10kW Transil 5.8V to 70V Uni
|
|
2,191在庫
|
|
|
¥158
|
|
|
¥129.7
|
|
|
¥92.7
|
|
|
¥74.6
|
|
|
¥60.5
|
|
|
表示
|
|
|
¥72.8
|
|
|
¥59.4
|
|
最低: 1
複数: 1
:
2,500
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
MOSFET N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
- STFU26N60M2
- STMicroelectronics
-
1:
¥560.9
-
922在庫
|
Mouser 部品番号
511-STFU26N60M2
|
STMicroelectronics
|
MOSFET N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
|
|
922在庫
|
|
|
¥560.9
|
|
|
¥365
|
|
|
¥279.7
|
|
|
¥233.8
|
|
|
表示
|
|
|
¥188
|
|
|
¥186.4
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
- SCTW90N65G2V
- STMicroelectronics
-
1:
¥3,668.8
-
45在庫
|
Mouser 部品番号
511-SCTW90N65G2V
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP24
|
|
45在庫
|
|
|
¥3,668.8
|
|
|
¥3,472.8
|
|
|
¥3,196.3
|
|
|
見積り
|
|
|
見積り
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
|
|
|
IGBT Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac
- STGW50H65DFB2-4
- STMicroelectronics
-
1:
¥837.4
-
564在庫
|
Mouser 部品番号
511-STGW50H65DFB2-4
|
STMicroelectronics
|
IGBT Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac
|
|
564在庫
|
|
|
¥837.4
|
|
|
¥472.4
|
|
|
¥338.1
|
|
|
¥311.3
|
|
最低: 1
複数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
MOSFET N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
- STL16N65M2
- STMicroelectronics
-
1:
¥478.7
-
1,340在庫
|
Mouser 部品番号
511-STL16N65M2
|
STMicroelectronics
|
MOSFET N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
|
|
1,340在庫
|
|
|
¥478.7
|
|
|
¥311.3
|
|
|
¥214.9
|
|
|
¥180.1
|
|
|
¥143.6
|
|
最低: 1
複数: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-HV-8
|
|
|
|
ESD保護ダイオード/TVSダイオード 1500 W 10kW Transil 5.8V to 70V Uni
- SM15T12AY
- STMicroelectronics
-
1:
¥158
-
2,236在庫
|
Mouser 部品番号
511-SM15T12AY
|
STMicroelectronics
|
ESD保護ダイオード/TVSダイオード 1500 W 10kW Transil 5.8V to 70V Uni
|
|
2,236在庫
|
|
|
¥158
|
|
|
¥129.7
|
|
|
¥97.5
|
|
|
¥79
|
|
|
¥62.3
|
|
|
表示
|
|
|
¥73.5
|
|
|
¥61.8
|
|
最低: 1
複数: 1
:
2,500
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
GaN FET 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
- SGT350R70GTK
- STMicroelectronics
-
1:
¥267
-
675在庫
-
新製品
|
Mouser 部品番号
511-SGT350R70GTK
新製品
|
STMicroelectronics
|
GaN FET 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
|
|
675在庫
|
|
|
¥267
|
|
|
¥178.5
|
|
|
¥149.2
|
|
|
¥143.5
|
|
|
¥133.8
|
|
|
表示
|
|
|
¥138.9
|
|
|
¥129.4
|
|
最低: 1
複数: 1
:
2,500
|
|
GaN FETs
|
GaN
|
SMD/SMT
|
DPAK-3
|
|
|
|
MOSFET N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
- ST8L60N065DM9
- STMicroelectronics
-
1:
¥1,023.8
-
230在庫
-
新製品
|
Mouser 部品番号
511-ST8L60N065DM9
新製品
|
STMicroelectronics
|
MOSFET N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
|
|
230在庫
|
|
|
¥1,023.8
|
|
|
¥701.5
|
|
|
¥513.5
|
|
|
¥485.1
|
|
最低: 1
複数: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
|
|
|
MOSFET N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
- ST8L65N044M9
- STMicroelectronics
-
1:
¥1,216.6
-
222在庫
-
新製品
|
Mouser 部品番号
511-ST8L65N044M9
新製品
|
STMicroelectronics
|
MOSFET N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
|
|
222在庫
|
|
|
¥1,216.6
|
|
|
¥829.5
|
|
|
¥633.6
|
|
|
¥598.8
|
|
最低: 1
複数: 1
:
3,000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
|
|
|
SIC SCHOTTKYダイオード 650 V, 10A High surge Silicon Carbide power Schottky diode
- STPSC10G065D
- STMicroelectronics
-
1:
¥486.6
-
940在庫
-
新製品
|
Mouser 部品番号
511-STPSC10G065D
新製品
|
STMicroelectronics
|
SIC SCHOTTKYダイオード 650 V, 10A High surge Silicon Carbide power Schottky diode
|
|
940在庫
|
|
|
¥486.6
|
|
|
¥243.3
|
|
|
¥219.6
|
|
|
¥177
|
|
|
¥172.2
|
|
最低: 1
複数: 1
|
|
SiC Schottky Diodes
|
|
Through Hole
|
TO-220AC-2
|
|
|
|
SIC SCHOTTKYダイオード Automotive 650 V, 10A High surge Silicon Carbide power Schottky diode
- STPSC10G065DY
- STMicroelectronics
-
1:
¥575.1
-
998在庫
-
新製品
|
Mouser 部品番号
511-STPSC10G065DY
新製品
|
STMicroelectronics
|
SIC SCHOTTKYダイオード Automotive 650 V, 10A High surge Silicon Carbide power Schottky diode
|
|
998在庫
|
|
|
¥575.1
|
|
|
¥327.1
|
|
|
¥274.9
|
|
|
¥230.7
|
|
|
表示
|
|
|
¥211.7
|
|
|
¥173.8
|
|
最低: 1
複数: 1
|
|
SiC Schottky Diodes
|
|
Through Hole
|
TO-220AC-2
|
|
|
|
SIC SCHOTTKYダイオード 650 V, 12A High surge Silicon Carbide power Schottky diode
- STPSC12G065D
- STMicroelectronics
-
1:
¥556.2
-
1,000在庫
-
新製品
|
Mouser 部品番号
511-STPSC12G065D
新製品
|
STMicroelectronics
|
SIC SCHOTTKYダイオード 650 V, 12A High surge Silicon Carbide power Schottky diode
|
|
1,000在庫
|
|
|
¥556.2
|
|
|
¥281.2
|
|
|
¥254.4
|
|
|
¥207
|
|
|
¥205.4
|
|
最低: 1
複数: 1
|
|
SiC Schottky Diodes
|
|
|
|
|
|
|
SIC SCHOTTKYダイオード 650 V, 4A power Schottky High Surge silicon carbide diode
- STPSC4G065UF
- STMicroelectronics
-
1:
¥360.2
-
2,061在庫
-
5,000取寄中
-
新製品
|
Mouser 部品番号
511-STPSC4G065UF
新製品
|
STMicroelectronics
|
SIC SCHOTTKYダイオード 650 V, 4A power Schottky High Surge silicon carbide diode
|
|
2,061在庫
5,000取寄中
|
|
|
¥360.2
|
|
|
¥230.7
|
|
|
¥159.6
|
|
|
¥134.8
|
|
|
表示
|
|
|
¥107.1
|
|
|
¥117.1
|
|
|
¥107.1
|
|
|
¥107.1
|
|
最低: 1
複数: 1
:
5,000
|
|
SiC Schottky Diodes
|
|
SMD/SMT
|
SMBF-2
|
|
|
|
SIC SCHOTTKYダイオード 650 V, 6A High surge Silicon Carbide power Schottky diode
- STPSC6G065D
- STMicroelectronics
-
1:
¥382.4
-
927在庫
-
新製品
|
Mouser 部品番号
511-STPSC6G065D
新製品
|
STMicroelectronics
|
SIC SCHOTTKYダイオード 650 V, 6A High surge Silicon Carbide power Schottky diode
|
|
927在庫
|
|
|
¥382.4
|
|
|
¥219.6
|
|
|
¥167.5
|
|
|
¥138.6
|
|
|
表示
|
|
|
¥120.7
|
|
|
¥119.9
|
|
最低: 1
複数: 1
|
|
SiC Schottky Diodes
|
|
Through Hole
|
TO-220AC-2
|
|
|
|
SIC SCHOTTKYダイオード 650 V, 8A High surge Silicon Carbide power Schottky diode
- STPSC8G065D
- STMicroelectronics
-
1:
¥428.2
-
1,000在庫
-
新製品
|
Mouser 部品番号
511-STPSC8G065D
新製品
|
STMicroelectronics
|
SIC SCHOTTKYダイオード 650 V, 8A High surge Silicon Carbide power Schottky diode
|
|
1,000在庫
|
|
|
¥428.2
|
|
|
¥211.7
|
|
|
¥191.2
|
|
|
¥152.9
|
|
|
¥143.9
|
|
最低: 1
複数: 1
|
|
SiC Schottky Diodes
|
|
|
|
|
|
|
MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
- STF80N240K6
- STMicroelectronics
-
1:
¥938.5
-
1,017在庫
-
1,000取寄中
-
新製品
|
Mouser 部品番号
511-STF80N240K6
新製品
|
STMicroelectronics
|
MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
|
|
1,017在庫
1,000取寄中
|
|
|
¥938.5
|
|
|
¥709.4
|
|
|
¥572
|
|
|
¥508.8
|
|
|
¥450.3
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
|
|
|
MOSFET N-Channel Enhancement Mode 40V, 1.1mohm 290A Automotive STripFET F8 Power MOSFET
- STL305N4F8AG
- STMicroelectronics
-
1:
¥450.3
-
3,000在庫
-
3,000取寄中
-
新製品
|
Mouser 部品番号
511-STL305N4F8AG
新製品
|
STMicroelectronics
|
MOSFET N-Channel Enhancement Mode 40V, 1.1mohm 290A Automotive STripFET F8 Power MOSFET
|
|
3,000在庫
3,000取寄中
|
|
|
¥450.3
|
|
|
¥292.3
|
|
|
¥202.2
|
|
|
¥165.9
|
|
|
¥154.7
|
|
最低: 1
複数: 1
:
3,000
|
|
MOSFETs
|
|
SMD/SMT
|
PowerFLAT-8
|
|
|
|
ESD保護ダイオード/TVSダイオード 5000 W, 100 V TVS in SMC
- SMC50J100A
- STMicroelectronics
-
1:
¥197.5
-
2,374在庫
|
Mouser 部品番号
511-SMC50J100A
|
STMicroelectronics
|
ESD保護ダイオード/TVSダイオード 5000 W, 100 V TVS in SMC
|
|
2,374在庫
|
|
|
¥197.5
|
|
|
¥162.7
|
|
|
¥125.9
|
|
|
¥124.2
|
|
|
¥102.4
|
|
|
表示
|
|
|
¥117.1
|
|
|
¥97.2
|
|
最低: 1
複数: 1
:
2,500
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
RF MOSFETトランジスタ 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
- RF5L08350CB4
- STMicroelectronics
-
1:
¥27,253.4
-
110在庫
-
NRND
|
Mouser 部品番号
511-RF5L08350CB4
NRND
|
STMicroelectronics
|
RF MOSFETトランジスタ 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor
|
|
110在庫
|
|
|
¥27,253.4
|
|
|
¥23,143.8
|
|
|
¥22,167.4
|
|
|
表示
|
|
|
見積り
|
|
最低: 1
複数: 1
:
120
|
|
RF MOSFET Transistors
|
Si
|
SMD/SMT
|
B4E-5
|
|
|
|
MOSFET N-channel 600 V Mdmesh 10A
- STD10NM60N
- STMicroelectronics
-
1:
¥388.7
-
3,663在庫
|
Mouser 部品番号
511-STD10NM60N
|
STMicroelectronics
|
MOSFET N-channel 600 V Mdmesh 10A
|
|
3,663在庫
|
|
|
¥388.7
|
|
|
¥293.9
|
|
|
¥237
|
|
|
¥216.5
|
|
|
表示
|
|
|
¥195.9
|
|
|
¥211.7
|
|
|
¥195.9
|
|
|
見積り
|
|
最低: 1
複数: 1
:
2,500
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na
- STFU28N65M2
- STMicroelectronics
-
1:
¥609.9
-
1,629在庫
|
Mouser 部品番号
511-STFU28N65M2
|
STMicroelectronics
|
MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na
|
|
1,629在庫
|
|
|
¥609.9
|
|
|
¥281.2
|
|
|
¥260.7
|
|
|
¥235.4
|
|
|
表示
|
|
|
¥218
|
|
|
¥203.8
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH
- STP7NK40Z
- STMicroelectronics
-
1:
¥365
-
2,315在庫
|
Mouser 部品番号
511-STP7NK40Z
|
STMicroelectronics
|
MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH
|
|
2,315在庫
|
|
|
¥365
|
|
|
¥128.3
|
|
|
¥119.1
|
|
|
¥114.6
|
|
|
表示
|
|
|
¥114.4
|
|
|
¥110.1
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|