STMicroelectronics トランジスタ

結果: 1,937
選択 画像 部品番号 メーカ 説明 データシート 在庫状況 価格: (JPY) 数量に基づき、単価ごとに表の結果をフィルタリングする 数量 RoHS 製品タイプ 技術 取り付け様式 パッケージ/ケース トランジスタ極性
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 37在庫
最低: 1
複数: 1
: 1,800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 1,003在庫
1,000取寄中
最低: 1
複数: 1

MOSFETs Si Through Hole TO-220FP-3 N-Channel
STMicroelectronics MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET 1,043在庫
最低: 1
複数: 1

MOSFETs Si Through Hole TO-220FP-3 N-Channel

STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 540在庫
600取寄中
最低: 1
複数: 1
: 600

IGBTs Si SMD/SMT HU3PAK-7
STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 766在庫
最低: 1
複数: 1

IGBTs Si Through Hole TO-247-3
STMicroelectronics MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET 496在庫
最低: 1
複数: 1
: 2,000

MOSFETs
STMicroelectronics MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET 910在庫
最低: 1
複数: 1
: 3,000

MOSFETs
STMicroelectronics MOSFET N-Ch 950V 1 Ohm 9A Zener 5 Power 722在庫
最低: 1
複数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea 185在庫
最低: 1
複数: 1

MOSFETs Si Through Hole TO-247-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa 841在庫
最低: 1
複数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3 963在庫
最低: 1
複数: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics IGBT 30A 600V Fast IGBT 5kHz 1.9 VCE 457在庫
最低: 1
複数: 1

IGBT Transistors Si Through Hole TO-3PF


STMicroelectronics MOSFET N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package 2,440在庫
最低: 1
複数: 1

MOSFETs Si Through Hole TO-251-3 N-Channel
STMicroelectronics バイポーラトランジスタ - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model 144在庫
最低: 1
複数: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 NPN
STMicroelectronics バイポーラトランジスタ - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model 21在庫
最低: 1
複数: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 PNP
STMicroelectronics バイポーラトランジスタ - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model 27在庫
最低: 1
複数: 1
BJTs - Bipolar Transistors Si SMD/SMT SMD.5 NPN


STMicroelectronics IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a 557在庫
最低: 1
複数: 1

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 121在庫
最低: 1
複数: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 169在庫
最低: 1
複数: 1
: 1,000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 527在庫
最低: 1
複数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 478在庫
最低: 1
複数: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 584在庫
最低: 1
複数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel

STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 459在庫
最低: 1
複数: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 338在庫
最低: 1
複数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 592在庫
最低: 1
複数: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel