|
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
¥1,510.5
-
37在庫
-
新製品
|
Mouser 部品番号
511-SCT040TO65G3
新製品
|
STMicroelectronics
|
SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37在庫
|
|
|
¥1,510.5
|
|
|
¥1,140.8
|
|
|
¥846.9
|
|
|
¥790
|
|
|
¥790
|
|
最低: 1
複数: 1
:
1,800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
¥380.8
-
1,003在庫
-
1,000取寄中
-
新製品
|
Mouser 部品番号
511-STF80N1K1K6
新製品
|
STMicroelectronics
|
MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1,003在庫
1,000取寄中
|
|
|
¥380.8
|
|
|
¥186.4
|
|
|
¥165.9
|
|
|
¥133.4
|
|
|
¥122.3
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
¥507.2
-
1,043在庫
-
新製品
|
Mouser 部品番号
511-STF80N600K6
新製品
|
STMicroelectronics
|
MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1,043在庫
|
|
|
¥507.2
|
|
|
¥254.4
|
|
|
¥249.6
|
|
|
¥208.6
|
|
|
¥183.3
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
¥699.9
-
540在庫
-
600取寄中
-
新製品
|
Mouser 部品番号
511-STGHU30M65DF2AG
新製品
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540在庫
600取寄中
|
|
|
¥699.9
|
|
|
¥464.5
|
|
|
¥328.6
|
|
|
¥282.8
|
|
最低: 1
複数: 1
:
600
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
¥662
-
766在庫
-
新製品
|
Mouser 部品番号
511-STGWA30M65DF2AG
新製品
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766在庫
|
|
|
¥662
|
|
|
¥445.6
|
|
|
¥330.2
|
|
|
¥293.9
|
|
|
¥260.7
|
|
最低: 1
複数: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
¥763.1
-
496在庫
-
新製品
|
Mouser 部品番号
511-STK615N4F8AG
新製品
|
STMicroelectronics
|
MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496在庫
|
|
|
¥763.1
|
|
|
¥507.2
|
|
|
¥360.2
|
|
|
¥339.7
|
|
|
¥320.7
|
|
|
¥316
|
|
最低: 1
複数: 1
:
2,000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
¥331.8
-
910在庫
-
新製品
|
Mouser 部品番号
511-STL160N6LF7
新製品
|
STMicroelectronics
|
MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910在庫
|
|
|
¥331.8
|
|
|
¥211.7
|
|
|
¥143.5
|
|
|
¥114.1
|
|
|
¥106.3
|
|
|
¥101.1
|
|
最低: 1
複数: 1
:
3,000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFET N-Ch 950V 1 Ohm 9A Zener 5 Power
- STI6N95K5
- STMicroelectronics
-
1:
¥401.3
-
722在庫
-
工場にステータスを確認する
|
Mouser 部品番号
511-STI6N95K5
工場にステータスを確認する
|
STMicroelectronics
|
MOSFET N-Ch 950V 1 Ohm 9A Zener 5 Power
|
|
722在庫
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFET N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA75N60DM6
- STMicroelectronics
-
1:
¥1,622.7
-
185在庫
|
Mouser 部品番号
511-STWA75N60DM6
|
STMicroelectronics
|
MOSFET N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
185在庫
|
|
|
¥1,622.7
|
|
|
¥1,136
|
|
|
¥880.1
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
- STF25N60M2-EP
- STMicroelectronics
-
1:
¥530.9
-
841在庫
|
Mouser 部品番号
511-STF25N60M2-EP
|
STMicroelectronics
|
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa
|
|
841在庫
|
|
|
¥530.9
|
|
|
¥289.1
|
|
|
¥262.3
|
|
|
¥213.3
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
- STF4N62K3
- STMicroelectronics
-
1:
¥466.1
-
963在庫
|
Mouser 部品番号
511-STF4N62K3
|
STMicroelectronics
|
MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
|
|
963在庫
|
|
|
¥466.1
|
|
|
¥172.2
|
|
|
¥165.9
|
|
|
¥161.2
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
IGBT 30A 600V Fast IGBT 5kHz 1.9 VCE
- STGWF30NC60S
- STMicroelectronics
-
1:
¥797.9
-
457在庫
|
Mouser 部品番号
511-STGWF30NC60S
|
STMicroelectronics
|
IGBT 30A 600V Fast IGBT 5kHz 1.9 VCE
|
|
457在庫
|
|
|
¥797.9
|
|
|
¥529.3
|
|
|
¥330.2
|
|
最低: 1
複数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-3PF
|
|
|
|
|
MOSFET N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
- STU3N65M6
- STMicroelectronics
-
1:
¥292.3
-
2,440在庫
-
NRND
|
Mouser 部品番号
511-STU3N65M6
NRND
|
STMicroelectronics
|
MOSFET N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package
|
|
2,440在庫
|
|
|
¥292.3
|
|
|
¥186.4
|
|
|
¥123.4
|
|
|
¥101.1
|
|
|
表示
|
|
|
¥88.5
|
|
|
¥81.4
|
|
|
¥81.2
|
|
最低: 1
複数: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
|
|
|
バイポーラトランジスタ - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
¥14,627.6
-
144在庫
|
Mouser 部品番号
511-2N2222AUB1
|
STMicroelectronics
|
バイポーラトランジスタ - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
144在庫
|
|
|
¥14,627.6
|
|
|
¥13,738.1
|
|
|
¥11,908.5
|
|
最低: 1
複数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
バイポーラトランジスタ - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
¥17,639.1
-
21在庫
|
Mouser 部品番号
511-2N2907AUB1
|
STMicroelectronics
|
バイポーラトランジスタ - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21在庫
|
|
最低: 1
複数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
バイポーラトランジスタ - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
¥37,008.3
-
27在庫
|
Mouser 部品番号
511-2N5154S1
|
STMicroelectronics
|
バイポーラトランジスタ - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
27在庫
|
|
|
¥37,008.3
|
|
|
¥31,189.2
|
|
|
見積り
|
|
|
見積り
|
|
最低: 1
複数: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
¥1,052.3
-
557在庫
|
Mouser 部品番号
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
557在庫
|
|
|
¥1,052.3
|
|
|
¥523
|
|
|
¥521.4
|
|
|
¥518.2
|
|
|
¥496.1
|
|
最低: 1
複数: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
¥3,246.9
-
121在庫
|
Mouser 部品番号
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
121在庫
|
|
|
¥3,246.9
|
|
|
¥2,332.1
|
|
|
¥2,265.7
|
|
|
¥2,115.6
|
|
最低: 1
複数: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
¥2,445.8
-
169在庫
|
Mouser 部品番号
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
169在庫
|
|
|
¥2,445.8
|
|
|
¥1,726.9
|
|
|
¥1,662.2
|
|
|
¥1,573.7
|
|
|
¥1,469.4
|
|
最低: 1
複数: 1
:
1,000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
¥2,468
-
527在庫
|
Mouser 部品番号
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
527在庫
|
|
|
¥2,468
|
|
|
¥1,742.7
|
|
|
¥1,485.2
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
¥2,986.2
-
478在庫
|
Mouser 部品番号
511-SCT020W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
478在庫
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
¥3,204.2
-
584在庫
|
Mouser 部品番号
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
584在庫
|
|
|
¥3,204.2
|
|
|
¥2,042.9
|
|
|
¥1,853.3
|
|
|
¥1,758.5
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
¥2,855.1
-
459在庫
|
Mouser 部品番号
511-SCT025W120G3AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
459在庫
|
|
|
¥2,855.1
|
|
|
¥2,088.8
|
|
|
¥1,834.4
|
|
|
見積り
|
|
|
見積り
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
¥2,572.2
-
338在庫
|
Mouser 部品番号
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338在庫
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
¥2,077.7
-
592在庫
|
Mouser 部品番号
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
592在庫
|
|
|
¥2,077.7
|
|
|
¥1,452
|
|
|
¥1,188.2
|
|
最低: 1
複数: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|