|
|
SiC MOSFET SiC MOSFET, 750 V
- IMZA75R040M2HXKSA1
- Infineon Technologies
-
1:
¥1,629
-
385在庫
-
新製品
|
Mouser 部品番号
726-IMZA75R040M2HXKS
新製品
|
Infineon Technologies
|
SiC MOSFET SiC MOSFET, 750 V
|
|
385在庫
|
|
|
¥1,629
|
|
|
¥1,185
|
|
|
¥987.5
|
|
|
¥880.1
|
|
|
¥821.6
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
40 A
|
80 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
142 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
- AIMDQ75R007M2HXTMA1
- Infineon Technologies
-
1:
¥5,463.6
-
24在庫
-
新製品
|
Mouser 部品番号
726-AIMDQ75R007M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
|
|
24在庫
|
|
|
¥5,463.6
|
|
|
¥4,471.4
|
|
|
¥3,950
|
|
|
¥3,931
|
|
|
¥3,924.7
|
|
|
表示
|
|
|
見積り
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
220 A
|
9 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
164 nC
|
- 55 C
|
+ 175 C
|
789 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R033M2HXTMA1
- Infineon Technologies
-
1:
¥1,673.2
-
130在庫
-
新製品
|
Mouser 部品番号
726-IMBG75R033M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
130在庫
|
|
|
¥1,673.2
|
|
|
¥1,309.8
|
|
|
¥1,091.8
|
|
|
¥982.8
|
|
|
¥908.5
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
50 A
|
41.3 mOhms
|
- 7 V, 23 V
|
5.6 V
|
37 nC
|
- 55 C
|
+ 175 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R060M2HXTMA1
- Infineon Technologies
-
1:
¥1,148.7
-
148在庫
-
新製品
|
Mouser 部品番号
726-IMBG75R060M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
148在庫
|
|
|
¥1,148.7
|
|
|
¥857.9
|
|
|
¥693.6
|
|
|
¥620.9
|
|
|
¥545.1
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
29 A
|
78 mOhms
|
- 7 V, 23 V
|
5.6 V
|
20 nC
|
- 55 C
|
+ 175 C
|
116 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMDQ75R040M2HXTMA1
- Infineon Technologies
-
1:
¥1,535.8
-
70在庫
-
新製品
|
Mouser 部品番号
726-IMDQ75R040M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
70在庫
|
|
|
¥1,535.8
|
|
|
¥1,083.9
|
|
|
¥903.8
|
|
|
¥804.2
|
|
|
¥752.1
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
45 A
|
50 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET Automotive SiC MOSFET, 750 V
- AIMZA75R025M2HXKSA1
- Infineon Technologies
-
1:
¥2,371.6
-
25在庫
-
新製品
|
Mouser 部品番号
726-AIMZA75R025M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET Automotive SiC MOSFET, 750 V
|
|
25在庫
|
|
|
¥2,371.6
|
|
|
¥1,930.8
|
|
|
¥1,608.4
|
|
|
¥1,433.1
|
|
|
¥1,338.3
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
60 A
|
31 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
49 nC
|
- 55 C
|
+ 175 C
|
202 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMDQ75R033M2HXTMA1
- Infineon Technologies
-
1:
¥1,785.4
-
100在庫
-
新製品
|
Mouser 部品番号
726-IMDQ75R033M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
100在庫
|
|
|
¥1,785.4
|
|
|
¥1,352.5
|
|
|
¥1,126.5
|
|
|
¥1,004.9
|
|
|
¥940.1
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
53 A
|
41.3 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
37 nC
|
- 55 C
|
+ 175 C
|
217 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
- AIMDQ75R050M2HXTMA1
- Infineon Technologies
-
1:
¥1,256.1
-
49在庫
-
新製品
|
Mouser 部品番号
726-AIMDQ75R050M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
|
|
49在庫
|
|
|
¥1,256.1
|
|
|
¥914.8
|
|
|
¥761.6
|
|
|
¥668.3
|
|
|
¥633.6
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
36 A
|
65 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
24 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMDQ75R020M2HXTMA1
- Infineon Technologies
-
1:
¥2,624.4
-
31在庫
-
新製品
|
Mouser 部品番号
726-AIMDQ75R020M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
31在庫
|
|
|
¥2,624.4
|
|
|
¥2,136.2
|
|
|
¥1,779.1
|
|
|
¥1,586.3
|
|
|
¥1,480.5
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
86 A
|
25 mOhms
|
-7 V to + 23 V
|
4.5 V
|
59 nC
|
- 55 C
|
+ 175 C
|
340 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
- AIMDQ75R040M2HXTMA1
- Infineon Technologies
-
1:
¥1,611.6
-
30在庫
-
新製品
|
Mouser 部品番号
726-AIMDQ75R040M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
|
|
30在庫
|
|
|
¥1,611.6
|
|
|
¥1,137.6
|
|
|
¥948
|
|
|
¥845.3
|
|
|
¥788.4
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
45 A
|
50 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R025M2HXTMA1
- Infineon Technologies
-
1:
¥2,035
-
128在庫
-
新製品
|
Mouser 部品番号
726-IMBG75R025M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
128在庫
|
|
|
¥2,035
|
|
|
¥1,591.1
|
|
|
¥1,325.6
|
|
|
¥1,181.8
|
|
|
¥1,104.4
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
64 A
|
31 mOhms
|
- 7 V, 23 V
|
5.6 V
|
49 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
¥6,506.4
-
1在庫
-
新製品
|
Mouser 部品番号
726-IMZC120R007M2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
1在庫
|
|
|
¥6,506.4
|
|
|
¥5,550.5
|
|
|
¥4,855.3
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R040M2HXTMA1
- Infineon Technologies
-
1:
¥1,483.6
-
160在庫
-
新製品
|
Mouser 部品番号
726-IMBG75R040M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
160在庫
|
|
|
¥1,483.6
|
|
|
¥1,046
|
|
|
¥872.2
|
|
|
¥777.4
|
|
|
¥726.8
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
42 A
|
50 mOhms
|
- 7 V, 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
156 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMDQ75R004M2HXTMA1
- Infineon Technologies
-
1:
¥9,372.6
-
604在庫
-
新製品
|
Mouser 部品番号
726-IMDQ75R004M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
604在庫
|
|
|
¥9,372.6
|
|
|
¥7,993.2
|
|
|
¥6,991.5
|
|
|
¥6,991.5
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
|
840 V
|
357 A
|
5 mOhms
|
- 7 V to + 23 V
|
5.6 V
|
342 nC
|
- 55 C
|
+ 175 C
|
1.499 kW
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMBG120R080M1XTMA1
- Infineon Technologies
-
1:
¥1,210.3
-
1,330在庫
|
Mouser 部品番号
726-AIMBG120R080M1X1
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
1,330在庫
|
|
|
¥1,210.3
|
|
|
¥805.8
|
|
|
¥684.1
|
|
|
¥684.1
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
27 A
|
80 mOhms
|
- 20 V, + 20 V
|
4.5 V
|
|
- 55 C
|
+ 175 C
|
714 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R060M1HXKSA1
- Infineon Technologies
-
1:
¥4,384.5
-
781在庫
-
NRND
|
Mouser 部品番号
726-W120R060M1HXKSA1
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
781在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
60 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
31 nC
|
- 55 C
|
+ 175 C
|
150 mW
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R045M1HXTMA1
- Infineon Technologies
-
1:
¥1,812.3
-
651在庫
|
Mouser 部品番号
726-IMBG120R045M1HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
651在庫
|
|
|
¥1,812.3
|
|
|
¥1,371.4
|
|
|
¥1,186.6
|
|
|
¥1,091.8
|
|
|
¥1,019.1
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
47 A
|
45 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
46 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R020M1HXKSA1
- Infineon Technologies
-
1:
¥3,245.3
-
380在庫
|
Mouser 部品番号
726-IMW120R020M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-3 package
|
|
380在庫
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
98 A
|
19 mOhms
|
- 10 V, + 23 V
|
4.2 V
|
83 nC
|
- 55 C
|
+ 150 C
|
375 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R060M1HXTMA1
- Infineon Technologies
-
1:
¥1,605.3
-
329在庫
|
Mouser 部品番号
726-IMBG120R060M1HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
329在庫
|
|
|
¥1,605.3
|
|
|
¥1,132.9
|
|
|
¥944.8
|
|
|
¥842.1
|
|
|
¥785.3
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
83 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
34 nC
|
- 55 C
|
+ 175 C
|
181 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMBG75R007M2HXTMA1
- Infineon Technologies
-
1:
¥5,193.5
-
744在庫
-
新製品
|
Mouser 部品番号
726-AIMBG75R007M2HXT
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
744在庫
|
|
|
¥5,193.5
|
|
|
¥4,248.6
|
|
|
¥3,866.3
|
|
|
¥3,673.5
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
840 V
|
198 A
|
9 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
169 nC
|
- 55 C
|
+ 175 C
|
651 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R007M2HXTMA1
- Infineon Technologies
-
1:
¥4,834.8
-
152在庫
-
新製品
|
Mouser 部品番号
726-IMBG75R007M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
152在庫
|
|
|
¥4,834.8
|
|
|
¥4,123.8
|
|
|
¥3,776.2
|
|
|
¥3,526.6
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
198 A
|
9 mOhms
|
- 7 V, 23 V
|
5.6 V
|
169 nC
|
- 55 C
|
+ 175 C
|
651 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R050M2HXTMA1
- Infineon Technologies
-
1:
¥1,224.5
-
1,184在庫
-
新製品
|
Mouser 部品番号
726-IMBG75R050M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
1,184在庫
|
|
|
¥1,224.5
|
|
|
¥979.6
|
|
|
¥793.2
|
|
|
¥726.8
|
|
|
¥624.1
|
|
最低: 1
複数: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
34 A
|
65 mOhms
|
- 7 V, 23 V
|
5.6 V
|
24 nC
|
- 55 C
|
+ 175 C
|
135 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMDQ75R050M2HXTMA1
- Infineon Technologies
-
1:
¥1,256.1
-
840在庫
-
新製品
|
Mouser 部品番号
726-IMDQ75R050M2HXTM
新製品
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
840在庫
|
|
|
¥1,256.1
|
|
|
¥1,006.5
|
|
|
¥813.7
|
|
|
¥723.6
|
|
|
¥639.9
|
|
最低: 1
複数: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
36 A
|
65 mhms
|
- 7 V, + 23 V
|
5.6 V
|
24 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMT65R075M2HXUMA1
- Infineon Technologies
-
1:
¥995.4
-
798在庫
-
新製品
|
Mouser 部品番号
726-IMT65R075M2HXUMA
新製品
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
798在庫
|
|
|
¥995.4
|
|
|
¥663.6
|
|
|
¥491.4
|
|
|
¥425
|
|
|
¥385.5
|
|
|
¥385.5
|
|
最低: 1
複数: 1
:
2,000
|
|
|
|
TOLL-8
|
|
|
650 V
|
|
75 mOhms
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
¥2,935.6
-
225在庫
-
新製品
|
Mouser 部品番号
726-IMY120R018CM2HXK
新製品
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
225在庫
|
|
|
¥2,935.6
|
|
|
¥2,389
|
|
|
¥1,990.8
|
|
|
¥1,774.3
|
|
|
見積り
|
|
|
見積り
|
|
最低: 1
複数: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|